Effects of thermal annealing on the optical properties of Ar ion irradiated ZnS films

Ceramics International

Volumn 39, Issue 6, 2013, Pages 6577-6581

  Xue, Shuwen ^a  

^a LINGNAN NORMAL UNIVERSITY   (China)

Author keywords

Ion implantation; PL; XRD; ZnS

Indexed keywords

ANNEALING TEMPERATURES; PL; POST-THERMAL ANNEALING; PREFERRED ORIENTATIONS; STRUCTURAL AND OPTICAL PROPERTIES; TRANSMITTANCE MEASUREMENTS; XRD; ZNS;

ION IMPLANTATION; OPACITY; SUBSTRATES; VACUUM EVAPORATION; X RAY DIFFRACTION; ZINC; ZINC SULFIDE;

ANNEALING;

EID: 84877702438     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2013.01.092     Document Type: Article

References (19)

1. X.D. Gao, X.M. Li, and W.D. Yu Morphology and optical properties of amorphous ZnS films deposited by ultrasonic-assisted successive ionic layer adsorption and reaction method Thin Solid Films 468 2004 43
2. S.H. Deulkar, C.H. Bhosale, and M. Sharon A comparative study of structural, compositional, thermal and optical properties of non stoichiometric (Zn,Fe)S chalcogenide pellets and thin films Journal of Physics and Chemistry of Solids 65 2004 1879
3. J. Vidal, O. De Melo, O. Vigil, N. Lopez, G. Contreras-Puente, and O. Zelaya-Angel Influence of magnetic field and type of substrate on the growth of ZnS films by chemical bath Thin Solid Films 419 2002 118
4. L.X. Shao, K.H. Chang, and H.L. Hwang Zinc sulfide thin films deposited by RF reactive sputtering for photovoltaic applications Applied Surface Science 212 2003 305
5. I. Kunio, O. Toshikazu, K. Yoichi, F. Shizuo, and F. Shigeo Growth of ZnS and ZnCdSSe alloys on GaP using an elemental sulfur source by molecular beam epitaxy Journal of Crystal Growth 138 1994 28
6. M. McLaughlin, H.F. Sakeek, P. Maguire, W.G. Graham, J. Molloy, T. Morrow, S. Laverty, and J. Anderson Properties of ZnS thin films prepared by 248-nm pulsed laser deposition Applied Physics Letters 63 1993 1865
7. A. Abounadi, M. Di Blasio, D. Bouchara, J. Calas, M. Averous, O. Briot, N. Briot, T. Cloitre, R.L. Aulombard, and B. Gil Reflectivity and photoluminescence measurements in ZnS epilayers grown by metal-organic chemical-vapor deposition Physical Review B 50 1994 11677
8. S.H. Mohamed, M. El-Hagary, and M. Emam-Ismail Thickness and annealing effects on the optoelectronic properties of ZnS films Journal of Physics D: Applied Physics 43 2010 075401
9. L.C. Olsen, R.C. Bohara, and D.L. Barton Vacuum-evaporated conducting ZnS films Applied Physics Letters 34 1979 528
10. + ion implantation into ZnS epitaxial layers grown by metalorganic vapor phase epitaxy Journal of Crystal Growth 117 1992 415
11. X.M. Meng, J. Liu, Y. Jiang, W.W. Chen, C.S. Lee, I. Bello, and S.T. Lee Structure- and size-controlled ultrafine ZnS nanowires Chemical Physics Letters 382 2003 434
12. Q. Lai, L.I. Burtrand, K.M. Jong, J.E. Jae, and C.Y. Jae Synthesis and characterization of ZnS:Cu,Al phosphor prepared by a chemical solution method Journal of Luminescence 104 2003 261
13. C. Ye, X. Fang, G. Li, and L. Zhang Origin of the green photoluminescence from zinc sulfide nanobelts Applied Physics Letters 85 2004 3035
14. X.S. Fang, T.Y. Zhai, U.K. Gautam, L.A. Li, L.M. Wu, B. Yoshio, and D. Golberg ZnS nanostructures: from synthesis to applications Progress in Materials Science 56 2011 175
15. J.H. Mackey, H.L. Smith, and A. Halperin Optical studies in x-irradiated high purity sodium silicate glasses Journal of Physics and Chemistry of Solids 27 1966 1759
16. J.A. Cohen, and G.G. Janezic Relationships among trapped hole and trapped electron centers in oxidized soda-silica glasses of high purity Physica Status Solidi A 77 1983 619
17. N. Kenny, C.R. Kannewurf, and D.H. Whitmore Optical absorption coefficients of vanadium pentoxide single crystals Journal of Physics and Chemistry of Solids 27 1966 1237
18. F. Urbach The long-wavelength edge of photographic sensitivity and of the electronic absorption of solids Physical Review 92 1953 1324
19. Y.Q. Gai, J.B. Li, B. Yao, and J.B. Xia The bipolar doping of ZnS via native defects and external dopants Journal of Applied Physics 105 2009 113704