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AIP Advances

Volumn 3, Issue 4, 2013, Pages

Low temperature dielectric relaxation and charged defects in ferroelectric thin films

(7) Artemenko, A a Payan, S a Rousseau, A a Levasseur, D a,b Arveux, E a Guegan, G b Maglione, M a

a CNRS (France)

b STMICROELECTRONICS (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BARIUM TITANATE; DEFECTS; ELECTRON SPIN RESONANCE SPECTROSCOPY; FERROELECTRIC FILMS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; MAGNETRONS; PARAMAGNETIC RESONANCE; PEROVSKITE; SOL-GELS; TEMPERATURE; THIN FILMS;

CHARGED DEFECTS; CRYOGENIC TEMPERATURES; ELECTRON PARAMAGNETIC RESONANCES (EPR); GROWTH MODES; GROWTH PROCESS; INTEGRATED CAPACITORS; LOW TEMPERATURES;

DIELECTRIC RELAXATION;

EID: 84877622948 PISSN: None EISSN: 21583226 Source Type: Journal
DOI: 10.1063/1.4802242 Document Type: Article

Times cited : (6)

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