Tunable light emission from nitrogen-vacancy centers in single crystal diamond PIN diodes

Applied Physics Letters

Volumn 102, Issue 15, 2013, Pages

  Kato, Hiromitsu ^a,b,c   Wolfer, Marco ^b   Schreyvogel, Christoph ^b   Kunzer, Michael ^b   Müller Sebert, Wolfgang ^b   Obloh, Harald ^b   Yamasaki, Satoshi ^a,c   Nebel, Christoph ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GAS-PHASE NITROGEN; NEGATIVELY CHARGED; NITROGEN VACANCIES; NITROGEN-VACANCY CENTER; PHOTOLUMINESCENCE EMISSION; SINGLE CRYSTAL DIAMOND; SOLID STATE QUBITS; SPECTRAL PROPERTIES;

DIAMOND FILMS; ELECTRONIC PROPERTIES; NITROGEN; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

DIAMONDS;

EID: 84877113007     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4801871     Document Type: Article

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