Nonlinear behavior of current-dependent emission for diamond light-emitting diodes

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 9, 2012, Pages 1754-1760

  Makino, Toshiharu ^a   Kanno, Shokichi ^a   Yamasaki, Satoshi ^a,b   Kato, Hiromitsu ^a   Okushi, Hideyo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

bound states; diamond; high density excitonic states; low dielectric constant

Indexed keywords

BOUND STATE; CARRIER TRAPPING; DEEP LEVEL EMISSION; DEEP-LEVELS; EXCITONIC EMISSION; EXCITONIC STATE; IMPURITY CENTERS; INJECTED CURRENT; LOW DIELECTRIC CONSTANTS; NONLINEAR BEHAVIOR; NONLINEAR EMISSIONS; P-I-N JUNCTIONS; RATE-EQUATION ANALYSIS; RECOMBINATION PROCESS; ROOM TEMPERATURE; SHOCKLEY-READ-HALL STATISTICS; SUBLINEAR; SUPERLINEAR; THREE-STEP PROCESS;

DIAMONDS; POINT DEFECTS;

LIGHT EMITTING DIODES;

EID: 84866426768     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201200047     Document Type: Article

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