Additive effect of poly(4-vinylphenol) gate dielectric in organic thin film transistor at low temperature process

Journal of Nanoscience and Nanotechnology

Volumn 13, Issue 5, 2013, Pages 3313-3316

  Yun, Ho Jin ^a   Baek, Kyu Ha ^b   Do, Lee Mi ^b   Jeong, Kwang Seok ^a   Kim, Yu Mi ^a   Yang, Seung Dong ^a   Lee, Sang Youl ^a   Lee, Hi Deok ^a   Lee, Ga Won ^a  

^a Chungnam National University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Low temperature; OTFT; Photo initiator; Polymer gate dielectric; PVP

Indexed keywords

LOW TEMPERATURES; OTFT; PHOTO-INITIATOR; POLYMER GATE DIELECTRICS; PVP;

CROSSLINKING; FIELD EFFECT TRANSISTORS; PHOTOTRANSISTORS; TEMPERATURE; THIN FILM TRANSISTORS;

GATE DIELECTRICS;

NANOPARTICLE; ORGANIC COMPOUND; POLY(4 VINYLPHENOL); POLY(4-VINYLPHENOL); POLYVINYL DERIVATIVE;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; EQUIPMENT DESIGN; EQUIPMENT FAILURE; MATERIALS TESTING; SEMICONDUCTOR;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; NANOPARTICLES; ORGANIC CHEMICALS; POLYVINYLS; TRANSISTORS, ELECTRONIC;

MLCS; MLOWN;

EID: 84876929687     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2013.7272     Document Type: Conference Paper

References (24)

1. H.-J. Yun, Y.-H. Ham, H.-S. Shin, K.-S. Jeong, J.-G. Park, D.-S. Choi, and G.-W. Lee, J. Nanosci. Nanotechnol. 11, 5640 (2011).
2. M. Leufgen, A. Lebib, T. Muck, U. Bass, V. Wagner, T. Borzenko, G. Schmidt, J. Geurts, and L. W. Molenkamp, Appl. Phys. Lett. 84, 1582 (2004).
3. F. M. Li, A. Nathan, Y. Wu, and B. S. Ong, Appl. Phys. Lett. 90, 133514 (2007).
4. M. Halik, H. Klauk, U. Zschieschang, G. Schmid, W. Radlik, and W. Weber, Adv. Mater. 14, 1717 (2002).
5. H. Klauk, M. Halik, U. Zschieschang, G. Schmid, and W. Radlik, J. Appl. Phys. 92, 5259 (2002).
6. T. Ohe, M. Kuribayashi, A. Tsuboi, K. Satori, M. Itabashi, and K. Nomoto, Appl. Phys. Express 2, 121502 (2009).
7. F.-Y. Yang, K.-J. Chang, M.-Y. Hsu, and C.-C. Liu, J. Mater. Chem. 18, 5927 (2008).
8. Y.-L. Loo and I. McCulloch, MRS Bull. 33, 653 (2008).
9. J. H. Seo, J.-H. Kwon, S.-I. Shin, K.-S. Suh and B.-K. Ju, Semicond. Sci. Technol. 22, 1039 (2007).
10. S. C. Lim, S. H. Kim, J. B. Koo, J. H. Lee, C. H. Ku, Y. S. Yang, and T. Zyung, Appl. Phys. Lett. 90, 173512 (2007).
11. D.-W. Park, C. A. Lee, K.-D. Jung, B.-J. Kim, B.-G. Park, H. Shin, and J. D. Lee, Jpn. J. Appl. Phys. 46, 2640 (2007).
12. K. P. Pernstich, A. N. Rashid, S. Haas, G. Schitter, D. Oberhoff, C. Goldmann, D. J. Gundlach, and B. Batlogg, J. Appl. Phys. 96, 6431 (2004).
13. C.-K. Song, B.-W. Koo, S.-B. Lee, and D.-H. Kim, Jpn. J. Appl. Phys. 41, 2730 (2002).
14. N. Kavasoglu, C. Tozlu, O. Pakma, A. S. Kavasoglu, S. Ozden, B. Metin, O. Birgi, and S. Oktik, Synth. Met. 159, 1880 (2009).
15. Y. Jang, D. H. Kim, Y. D. Park, J. H. Cho, M. Hwang, and K. Cho, Appl. Phys. Lett. 87, 152105 (2005).
16. C. A. Lee, D. W. Park, S. H. Jin, I. H. Park, J. D. Lee, and B.-G. Park, Appl. Phys. Lett. 88, 252102 (2006).
17. C. A. Lee, D.-W. Park, K.-D. Jung, B.-j. Kim, Y. C. Kim, J. D. Lee, and B.-G. Park, Appl. Phys. Lett. 89, 262120 (2006).
18. W. J. Kim, C. S. Kim, S. J. Jo, S. W. Lee, S. J. Lee, and H. K. Baik, Electrochem. Solid-State Lett. 10, H1 (2007).
19. W. Hu, Y. Zhao, J. Hou, C. Ma, and S. Liu, Microelectron. J. 38, 632 (2007).
20. Y. Jang, J. H. Cho, D. H. Kim, Y. D. Park, M. Hwang, and K. Cho, Appl. Phys. Lett. 90, 132104 (2007).
21. Y. Jang, J. H. Cho, D. H. Kim, Y. D. Park, M. Hwang, and K. Cho, Appl. Phys. Lett. 90, 132104 (2007).
22. K. C. Su, J. S. Jin, L. S. Won, K. W. Jin, B. H. Koo, and S. Jong, L. Adv. Fun. Mat. 17 958 (2007).
23. S. Alina, K. Justyna, P. Anna, and S. W. Joanna, App. Surf. Sci. 255, 2030 (2008).
24. L. Kimoon, K. Ki-Tae, H. L. Kwang, L. Gyubaek, O. Min Suk, C.-M. Jeong, I. Seongil, J. Sungjin, and K. Eugene, App. Phys. Lett. 93, 193514 (2008).