Technology aspects of a CMOS neuro-sensor: Back end process and packaging

European Solid-State Device Research Conference

Volumn , Issue , 2003, Pages 167-170

  Hofmann, Franz ^a   Eversmann, Bjom ^a   Jenkner, Martin ^a   Frey, Alexander ^a   Menz, Matthias ^b   Birkenmaier, Tamara ^b   Fromherz, Peter ^b   Schreiter, Matthias ^c   Gabl, Reinhard ^c   Plehnert, Kurt ^c   Steinhauser, Michael ^c   Eckstein, Gerald ^c   Thews, Roland ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b MAX PLANCK INSTITUTE OF BIOCHEMISTRY   (Germany)

^c SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84876666205     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256837     Document Type: Conference Paper

References (5)

1. P. Fromherz, "Electrical Interfacing of Nerve Cells and Semiconductor Chips" CHEMPHYSCHEM 3, 2002, p. 276-284.
2. B. Eversmann et al, "A 128 x 128 CMOS Bio-Sensor Array for Extracellular Recording of Neural Activity ", ISSCC, Digest of Tech. Papers, 2003, p. 222-223.
3. S. A. Campbell et al, "Titanium dioxide based gate insulators", IBM J. RES. DEVELOP. Vol 43, 1999, p. 383-391.
4. H. I. Iwai et al, "Advanced Gate Dielectric Materials for Sub 100 nm CMOS", IEDM Tech. Digest 2002, p. 625-628.
5. B. Besl and P. Fromherz, "Transistor array with an organotypic brain slice: field potential records and synaptic currents", European J. of Neuroscience, Vol. 15 2002, p. 999-1005.