Improved carrier mobility for pentacene TFT by NH3 annealing of gate dielectric

Solid-State Electronics

Volumn 51, Issue 1, 2007, Pages 77-80

  Kwan, M C ^a   Cheng, K H ^a   Lai, P T ^a   Che, C M ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Ammonia annealing; Mobility; OTFT; Pentacene

Indexed keywords

AMMONIA ANNEALING; GATE DIELECTRICS; MICROGRAPHS; PENTACENE;

ANNEALING; CARRIER MOBILITY; DIELECTRIC MATERIALS; GATES (TRANSISTOR); PASSIVATION; SURFACE PHENOMENA;

THIN FILM TRANSISTORS;

EID: 84876290435     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.11.005     Document Type: Article

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