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Volumn 87, Issue 15, 2013, Pages

Deep electron traps and origin of p-type conductivity in the earth-abundant solar-cell material Cu2ZnSnS4

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EID: 84876176748     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.87.155206     Document Type: Article
Times cited : (123)

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    • -3 Zn- or Sn-site defects.
    • - 3 Zn- or Sn-site defects.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.