Record high conversion gain ambipolar graphene mixer at 10GHz using scaled gate oxide

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Madan, H ^a   Hollander, M J ^a   Labella, M ^a   Cavalero, R ^a   Snyder, D ^a   Robinson, J A ^a   Datta, S ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE-SCALING; EQUIVALENT OXIDE THICKNESS; GATE LENGTH; GATE OXIDE; GRAPHENE TRANSISTORS; HIGH CONVERSIONS; INTERFACE STATE DENSITY; OUTPUT CHARACTERISTICS;

ELECTRON DEVICES; MIXERS (MACHINERY); MIXING;

GRAPHENE;

EID: 84876159652     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6478977     Document Type: Conference Paper

References (6)

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