Effect of swirl-like resistivity striations in n+-type Sb doped Si wafers on the properties of Ag/porous silicon SERS substrates

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 10, Issue 4, 2013, Pages 624-627

  Bandarenka, Hanna ^a   Artsemyeva, Kseniya ^a   Redko, Sergey ^a   Panarin, Andrei ^b   Terekhov, Sergey ^b   Bondarenko, Vitaly ^a  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^b B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

Author keywords

Microdefects; Porous silicon; Resistivity striations; SERS

Indexed keywords

CZOCHRALSKI WAFERS; DEVICE FAILURES; HIGH-TEMPERATURE ANNEALING; IMMERSION DEPOSITION; MICRO-DEFECTS; MORPHOLOGICAL CHANGES; SERS; SURFACE REGION;

NANOSTRUCTURES; POROUS SILICON; SCANNING ELECTRON MICROSCOPY; SILICON; SILVER DEPOSITS; SUBSTRATES;

SILICON WAFERS;

EID: 84876070788     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201200731     Document Type: Article

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