Physical properties of the absorber layer Sn2Sb2S5 thin films for photovoltaics

Current Nanoscience

Volumn 9, Issue 1, 2013, Pages 149-152

  Ali, N ^a,b   Hussain, A ^c   Hussain, S T ^b   Iqbal, M A ^a   Shah, M ^c   Rahim, I ^c   Ahmad, N ^b,e   Ali, Z ^b   Hutching, K ^d   Lane, D ^d   Syed, W A A ^f  

^a UNIVERSITY OF THE PUNJAB   (Pakistan)

^b QUAID I AZAM UNIVERSITY   (Pakistan)

^c UNIVERSITY OF PESHAWAR   (Pakistan)

^d CRANFIELD UNIVERSITY   (United Kingdom)

^e HAZARA UNIVERSITY   (Pakistan)

^f INTERNATIONAL ISLAMIC UNIVERSITY   (Pakistan)

Author keywords

Absorption coefficient; Band gap; Photovoltaics; Transmittance

Indexed keywords

ANNEALING; ANTIMONY COMPOUNDS; ENERGY GAP; PHYSICAL PROPERTIES; SUBSTRATES; SULFUR COMPOUNDS; THERMAL EVAPORATION; TIN COMPOUNDS;

ABSORPTION CO-EFFICIENT; ANNEALING TEMPERATURES; INCREASING TEMPERATURES; N-TYPE CONDUCTIVITY; PHOTOVOLTAICS; THERMAL EVAPORATION TECHNIQUE; THICKNESS OF THE FILM; TRANSMITTANCE;

THIN FILMS;

ANTIMONY DERIVATIVE; TIN DERIVATIVE;

ARTICLE; ELECTRICAL PARAMETERS; ELECTRICITY; ELLIPSOMETRY; EVAPORATION; FILM; PARTICLE SIZE; PHOTOCONDUCTION; PHOTOVOLTAIC; PRESSURE CHAMBER; PRIORITY JOURNAL; ROENTGEN SPECTROSCOPY; SURFACE PROPERTY; TEMPERATURE; THICKNESS;

EID: 84875931077     PISSN: 15734137     EISSN: 18756786     Source Type: Journal    
DOI: 10.2174/157341313805117794     Document Type: Article

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