Electrical conduction behavior and hopping rates estimate of cadmium zinc telluride single crystal

Journal of Crystal Growth

Volumn 372, Issue , 2013, Pages 175-179

  Li, Qiang ^a   Li, Hongbo ^a   Fan, Huiqing ^a   Jie, Wanqi ^a   Xu, Mengmeng ^a   Wang, Hairong ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

A1. Defects; A2. CdZnTe single crystal growth; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

ACTIVATION ENERGY; CADMIUM ALLOYS; CADMIUM TELLURIDE; CHEMICAL ACTIVATION; IONIC CONDUCTION; IONIZATION; RADIATION DETECTORS; SINGLE CRYSTALS; Z TRANSFORMS; ZINC; ZINC COMPOUNDS;

BULK CONTRIBUTIONS; CADMIUM ZINC TELLURIDES; COMPLEX IMPEDANCE PLOTS; DC ELECTRICAL CONDUCTIVITY; ELECTRICAL CONDUCTION; ELECTRICAL IMPEDANCE; IMPEDANCE SPECTROSCOPY; MODIFIED VERTICAL BRIDGMAN METHOD;

CRYSTAL GROWTH FROM MELT;

EID: 84875890878     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2013.03.038     Document Type: Article

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