Dielectric properties and relaxation behavior of the indium doped cadmium zinc telluride single crystal

Journal of Applied Physics

Volumn 111, Issue 8, 2012, Pages

  Li, Qiang ^a   Fan, Huiqing ^a   Jie, Wanqi ^a   Peng, Biaolin ^a   Long, Changbai ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AC CONDUCTION; ANTISITES; CADMIUM ZINC TELLURIDES; DC CONDUCTION; DC CONDUCTIVITY; DIELECTRIC PERMITTIVITIES; HIGH TEMPERATURE; HOPPING ENERGIES; IMAGINARY PARTS; LOW FREQUENCY; LOW FREQUENCY REGIONS; RELAXATION BEHAVIORS; TEMPERATURE DEPENDENT; THERMAL ACTIVATION ENERGIES; THERMALLY ACTIVATED;

ACTIVATION ENERGY; CADMIUM; CADMIUM ALLOYS; CADMIUM TELLURIDE; DIELECTRIC LOSSES; DIELECTRIC MATERIALS; PERMITTIVITY; SINGLE CRYSTALS;

INDIUM;

EID: 84860501630     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4705401     Document Type: Article

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