Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors

Nature Communications

Volumn 4, Issue , 2013, Pages

  Lu, Guanghao ^a,b,f   Blakesley, James ^a,g   Himmelberger, Scott ^c   Pingel, Patrick ^a,b   Frisch, Johannes ^b   Lieberwirth, Ingo ^d   Salzmann, Ingo ^b   Oehzelt, Martin ^e   Di Pietro, Riccardo ^a   Salleo, Alberto ^c   Koch, Norbert ^b,e   Neher, Dieter ^a  

^a UNIVERSITY OF POTSDAM   (Germany)

^b HUMBOLDT UNIVERSITY   (Germany)

^c Stanford University   (United States)

^d MAX PLANCK INSTITUTE FOR POLYMER RESEARCH   (Germany)

^e HAHN MEITNER INSTITUT   (Germany)

^f UNIVERSITY OF MASSACHUSETTS   (United States)

^g NATIONAL PHYSICAL LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

NANOCOMPOSITE; POLYMER; POLYSTYRENE;

CHEMICAL COMPOSITION; ELECTRICAL CONDUCTIVITY; ELECTRONIC EQUIPMENT; ORGANIC COMPOUND; PERFORMANCE ASSESSMENT; POLYMER; SPATIAL DISTRIBUTION;

ARTICLE; CONCENTRATION (PARAMETERS); MOLECULAR MECHANICS; SEMICONDUCTOR;

EID: 84875873963     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms2587     Document Type: Article

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