Semiconducting selenium nanoparticles: Structural, electrical characterization, and formation of a back-to-back Schottky diode device

Journal of Applied Physics

Volumn 113, Issue 12, 2013, Pages

  Sinha, Subhojyoti ^a   Kumar Chatterjee, Sanat ^a   Ghosh, Jiten ^b   Kumar Meikap, Ajit ^a  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (India)

^b CSIR CENTRAL GLASS AND CERAMIC RESEARCH INSTITUTE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTIC; CHARGE TRANSPORT MECHANISMS; CORRELATED BARRIER HOPPING; ELECTRICAL CHARACTERIZATION; MICROSTRUCTURAL PARAMETERS; SCHOTTKY BARRIER HEIGHTS; VOLTAGE CHARACTERISTICS; X RAY DIFFRACTION LINE PROFILE ANALYSIS;

ACTIVATION ENERGY; GRAIN BOUNDARIES; NANOPARTICLES; ORGANIC ACIDS; RIETVELD REFINEMENT; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SELENIUM COMPOUNDS; TRANSPORT PROPERTIES; X RAY DIFFRACTION;

SYNTHESIS (CHEMICAL);

EID: 84875802314     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4796106     Document Type: Article

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