Bipolar resistive switching properties in transparent vanadium oxide resistive random access memory

Ceramics International

Volumn 39, Issue SUPPL.1, 2013, Pages

  Yang, Fann Wei ^a   Chen, Kai Huang ^b   Cheng, Chien Min ^a   Su, Feng Yi ^a  

^a SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b TUNG FANG DESIGN UNIVERSITY   (Taiwan)

Author keywords

C. Electrical conductivity; C. Electrical properties; E. Capacitors; E. Functional applications

Indexed keywords

E. CAPACITORS; E. FUNCTIONAL APPLICATIONS; ELECTRICAL CONDUCTION PROPERTIES; ELECTRICAL CONDUCTIVITY; INDIUM TIN OXIDE SUBSTRATES; RESISTANCE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING;

DEPOSITS; ELECTRIC CONDUCTIVITY; OXIDES; THIN FILMS; TIN OXIDES;

NONVOLATILE STORAGE;

EID: 84875754151     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2012.10.170     Document Type: Conference Paper

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