Fermi level shift in La2-xSrxCuO4 probed by heteroepitaxial junctions with Nb-doped SrTiO3

Applied Physics Letters

Volumn 102, Issue 11, 2013, Pages

  Li, B S ^a,b,c   Sawa, A ^c   Okamoto, H ^b  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b UNIVERSITY OF TOKYO   (Japan)

^c NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BUILT-IN POTENTIAL; CARRIER DOPING; CONVENTIONAL THEORY; FERMI-LEVEL SHIFTS; HALL MEASUREMENTS; HETEROEPITAXIAL; NB-DOPED SRTIO; P-N DIODE;

SEMICONDUCTOR DIODES; STRONTIUM TITANATES;

EPITAXIAL GROWTH;

EID: 84875713908     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4798252     Document Type: Article

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