Firing of a pulse and its control using a novel floating electrode bi-resistive device

Materials Research Society Symposium Proceedings

Volumn 1430, Issue , 2012, Pages 117-122

  Kang, Y ^a   Verma, M ^a   Liu, T ^a   Orlowski, M ^a  

^a State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL THRESHOLD; CROSSBAR ARRAYS; CURRENT SURGES; FLOATING ELECTRODES; IV CHARACTERISTICS; LOW-RESISTANCE STATE; RESET CURRENTS; RESISTIVE SWITCHES;

TIME SWITCHES;

PULSE GENERATORS;

EID: 84875461526     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/opl.2012.935     Document Type: Conference Paper

References (8)

1. N. Banno, T. Sakamoto, N. Iguchi, H. Kawaura, S. Kaeriyama, M. Mizuno, K.Terabe,T.Hasegawa, M. Aono, "Solid-Electrolyte Nanometer Switch", IEICE Trans. Electron., vol. 869, p. 1492-98 (2006)
2. A. Sawa, "Resistive Switching in transition metal oxides", Materials Today, vol. 11, p.28-36 (2008)
3. I. Valov, et al "Electrochemical metallization memories - fundamentals, applications, prospects", Nanotechnology 22(25) pp. 4003-25 (2011)
4. R. Waser, I. Valov, "Electrochemical Reactions in Nanoionics - Towards Future Resistive Switching Memories", ECS Transactions, 25 (6) 431-437 (2009)
5. T. Liu, Y. Kang, M. Verma, "Anti-Parallel Circuit of Resistive Cu/TaOx/Pt Switches", paper accepted to this conference
6. E. Linn, R. Rosezin, C. Kugeler, R. Waser, "Complementary resistive switches for passive nancrossbar memories" Nature Materials Letters, vol. 9, p. 403-406 (2010)
7. Y. Kang, T. Liu, M. Verma, M. Orlowski, "Program and erase operation of a floating electrode bi-resistive device using compliance current constraint," IEEE Trans. Electron Devices, submitted for publication.
8. W. Gerstner and W. M. Kistler, Spiking Neuron Models. Cambridge, U.K.: Cambridge Univ. Press, 2002