Effects of pulsed laser annealing on deep level defects in electrochemically-deposited and furnace annealed CuInSe2 thin films

Thin Solid Films

Volumn 531, Issue , 2013, Pages 566-571

  Bhatia, A ^a   Meadows, H ^b   Hlaing Oo, W M ^a   Dale, P J ^b   Scarpulla, M A ^a,c  

^a UNIVERSITY OF UTAH   (United States)

^b UNIVERSITY OF LUXEMBOURG   (Luxembourg)

^c University of Utah   (United States)

Author keywords

Chalcopyrite; Cu(In,Ga)Se2; CuInSe2; Defects; Pulsed laser annealing; Thin film photovoltaics

Indexed keywords

CHALCOPYRITE; CHALCOPYRITE SOLAR CELLS; CU (IN ,GA)SE; CUINSE2; LASER-INDUCED GENERATION; PULSED LASER ANNEALING; THIN FILM PHOTOVOLTAIC CELLS; THIN FILM PHOTOVOLTAICS;

ACTIVATION ENERGY; COPPER COMPOUNDS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; DEPOSITS; GALLIUM; PHOTOVOLTAIC CELLS; PULSED LASERS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SELENIUM COMPOUNDS; THIN FILMS; VAPORS;

ANNEALING;

EID: 84875447409     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.12.076     Document Type: Article

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