Nanogranular Al2O3 proton conducting films for low-voltage oxide-based homojunction thin-film transistors

Journal of Materials Chemistry C

Volumn 1, Issue 15, 2013, Pages 2781-2786

  Zhang, Hongliang ^a   Guo, Liqiang ^a   Wan, Qing ^a  

^a NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; CONDUCTIVE FILMS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; INDIUM COMPOUNDS; OXIDE FILMS; OXYGEN; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PORE SIZE; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; TIN OXIDES;

AMORPHOUS STRUCTURES; HIGH FIELD EFFECT MOBILITY; INDIUM TIN OXIDE THIN FILMS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS (PE CVD); PORTABLE BIOSENSORS; PROTON CONDUCTING; STRUCTURAL CHARACTERIZATION; TRIMETHYLALUMINUM;

THIN FILMS;

EID: 84875417941     PISSN: 20507534     EISSN: 20507526     Source Type: Journal    
DOI: 10.1039/c3tc30137k     Document Type: Article

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