Temperature dependent resistivity study on zinc oxide and the role of defects

Materials Science in Semiconductor Processing

Volumn 16, Issue 2, 2013, Pages 332-336

  Roy, Tapatee Kundu ^a   Sanyal, D ^a   Bhowmick, Debasis ^a   Chakrabarti, Alok ^a  

^a VARIABLE ENERGY CYCLOTRON CENTRE   (India)

Author keywords

Defects; Electrical properties; Positron annihilation spectroscopy; Semiconductor

Indexed keywords

ELECTRON CONDUCTION; NEGATIVE TEMPERATURE COEFFICIENT OF RESISTANCES; OXYGEN-VACANCY-LIKE DEFECTS; ROOM-TEMPERATURE RESISTIVITY; TEMPERATURE COEFFICIENT OF RESISTANCE; TEMPERATURE DEPENDENT; TEMPERATURE REGIONS; TEMPERATURE-DEPENDENT RESISTIVITY;

ACTIVATION ENERGY; ELECTRIC PROPERTIES; OXYGEN VACANCIES; POSITRON ANNIHILATION SPECTROSCOPY; SCATTERING PARAMETERS; SEMICONDUCTOR MATERIALS; ZINC OXIDE;

DEFECTS;

EID: 84875224383     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2012.09.018     Document Type: Article

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