Characteristics of nanostructured CdO/Si heterojunction photodetector synthesized by CBD

Solid-State Electronics

Volumn 82, Issue , 2013, Pages 115-121

  Ismail, Raid A ^a   Al Samarai, Abdul Majeed E ^b   Mohmed, Sabre J ^b   Ahmed, Hani H ^b  

^a UNIVERSITY OF TECHNOLOGY   (Iraq)

^b TIKRIT UNIVERSITY   (Iraq)

Author keywords

CdO Si heterojunction; Chemical bath deposition; Nanostructured; Nanowires; Optoelectronic characteristics

Indexed keywords

ATOMIC FORCE MICROSCOPE (AFM); CAPACITANCE VOLTAGE CHARACTERISTIC; CHEMICAL-BATH DEPOSITION; HETEROJUNCTION PHOTODETECTORS; MORPHOLOGY INVESTIGATIONS; NANO-STRUCTURED; OPTOELECTRONIC CHARACTERISTICS; SINGLE-CRYSTAL SILICON WAFERS;

ATOMIC FORCE MICROSCOPY; DEPOSITS; ELECTRIC RECTIFIERS; HETEROJUNCTIONS; NANOWIRES; PHOTODETECTORS; PHOTONS; SILICON DETECTORS; SILICON WAFERS; STOICHIOMETRY; STRUCTURAL PROPERTIES; X RAY DIFFRACTION;

FILM PREPARATION;

EID: 84875192239     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2013.02.035     Document Type: Article

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