Investigation of AlGaN/GaN HEMTs on Si substrate using backgating

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 65-68

  Marso, M ^a   Wolter, M ^a   Javorka, P ^a   Alam, A ^b   Fox, A ^a   Heuken, M ^b   Kordos P ^a   Luth H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; DRAIN CURRENT; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NITRIDES; SILICON; WIDE BAND GAP SEMICONDUCTORS;

ALGAN/GAN HEMTS; DC CHARACTERISTICS; DEVICE FABRICATIONS; NEGATIVE SUBSTRATES; SHORT LIGHT PULSE; SI SUBSTRATES; SILICON (111) SUBSTRATES; SUBSTRATE VOLTAGE;

SUBSTRATES;

EID: 84875120572     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390118     Document Type: Conference Paper

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