Progress of InGaN light emitting diodes on SiC

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 276-279

  Strauss, U ^a   Lugauer, H J ^a   Weimar, A ^a   Baur, J ^a   Bruderl G ^a   Eisert, D ^a   Kuhn F ^a   Zehnder, U ^a   Harle V ^a  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EFFICIENCY; EPITAXIAL GROWTH; III-V SEMICONDUCTORS; LIGHT EMITTING DIODES; NITRIDES; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; WIDE BAND GAP SEMICONDUCTORS;

EXTERNAL QUANTUM EFFICIENCY; GROWTH PARAMETERS; INGAN QUANTUM WELLS; INTERFACE QUALITY; INTERNAL QUANTUM EFFICIENCY; LIGHT EXTRACTION; RAY TRACE SIMULATION; STRUCTURAL QUALITIES;

QUANTUM EFFICIENCY;

EID: 84875119759     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390042     Document Type: Conference Paper

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