Transient photocurrent as a probe to follow n-InP oxidation

Physica Status Solidi C: Conferences

Volumn , Issue 3, 2003, Pages 1033-1038

  Quach, N C ^a   Gerard I ^a   Simon, N ^a   Etcheberry, A ^a  

^a UNIVERSITÉ DE VERSAILLES SAINT QUENTIN EN YVELINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

INP; OXIDATION MECHANISMS; PHOTOCURRENT TRANSIENTS; SURFACE COVERAGES; TRANSIENT PHOTOCURRENTS; XPS ANALYSIS;

ELECTRIC PROPERTIES; PHOTOCURRENTS; SEMICONDUCTOR MATERIALS;

OXIDATION;

EID: 84875114192     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200306231     Document Type: Conference Paper

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