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Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 116-119

Growth and characteristics of In-doped GaN thin films

(8) Kim, C S a Yoon, H S a Choi, R J a Cho, H K a Kang, D S a Hong, C H a Hahn, Y B a Lee, H J a

a Chonbuk National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEEP LEVEL TRANSIENT SPECTROSCOPY; FLOW RATE; GALLIUM NITRIDE; HALL MOBILITY; III-V SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SAPPHIRE; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS;

DISLOCATION DENSITIES; ELECTRICAL CHARACTERISTIC; HALL EFFECT MEASUREMENT; INTERFACE LAYER; MIXED-CONDUCTION MODEL; TEMPERATURE DEPENDENT; TRIMETHYLINDIUM; X RAY ROCKING CURVE;

INDIUM COMPOUNDS;

EID: 84875091738 PISSN: 16101634 EISSN: None Source Type: Conference Proceeding
DOI: 10.1002/pssc.200390003 Document Type: Conference Paper

Times cited : (2)

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