Deposition of ß-SiC by a LPCVD method and the effect of the crystallographic orientation on mechanical properties

Journal of the Korean Ceramic Society

Volumn 50, Issue 1, 2013, Pages 43-49

  Kim, Daejong ^a   Lee, Jongmin ^a,b   Kim, Weon Ju ^a   Yoon, Soon Gil ^b   Park, Ji Yeon ^a  

^a Korea Atomic Energy Research Institute   (South Korea)

^b Chungnam National University   (South Korea)

Author keywords

Crystallographic orientation; CVD; Hardness; Nanoindentation; Silicon carbide

Indexed keywords

CRYSTALLOGRAPHIC ORIENTATIONS; DEPOSITION PRESSURES; GRAPHITE SUBSTRATE; HARDNESS AND ELASTIC MODULUS; PREFERRED ORIENTATIONS; TOTAL PRESSURE; XRD;

CHEMICAL VAPOR DEPOSITION; DEPOSITS; FLOW RATE; HARDNESS; NANOINDENTATION; X RAY POWDER DIFFRACTION;

SILICON CARBIDE;

EID: 84874726899     PISSN: 12297801     EISSN: None     Source Type: Journal    
DOI: 10.4191/kcers.2013.50.1.43     Document Type: Article

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