Enhanced inverse spin-Hall effect in ultrathin ferromagnetic/normal metal bilayers

Applied Physics Letters

Volumn 102, Issue 7, 2013, Pages

  Skinner, T D ^a   Kurebayashi, H ^a,b   Fang, D ^c   Heiss, D ^a,e   Irvine, A C ^a   Hindmarch, A T ^d,f   Wang, M ^d   Rushforth, A W ^d   Ferguson, A J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

^d UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^e EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^f DURHAM UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANGULAR DEPENDENCE; BI-LAYER; CHARGE CURRENT; METAL BILAYERS; MICRODEVICES; SPIN-PUMPING; ULTRA-THIN;

PHYSICAL PROPERTIES;

PHYSICS;

EID: 84874542187     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4792693     Document Type: Article

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