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Volumn 102, Issue 7, 2013, Pages

Intrinsic electronic switching time in ultrathin epitaxial vanadium dioxide thin film

(9) Kar, Ayan a Shukla, Nikhil a Freeman, Eugene a Paik, Hanjong b Liu, Huichu a Engel Herbert, Roman c Bhardwaja, S S N c Schlom, Darrell G b Datta, Suman a

a The Pennsylvania State University (United States)

b School of Operations Research and Industrial Engineering (United States)

c PENNSYLVANIA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AC CONDUCTIVITY; ELECTRONIC SWITCHING; EPITAXIAL SINGLE CRYSTALS; IMPEDANCE SPECTROSCOPY; INSULATING PHASE; INSULATOR TO METAL; INTRINSIC ELECTRONICS; METALLIC PHASE; PHASE CO-EXISTENCE; RUTILE TIO; SCALING STUDY; SWITCHING CHARACTERISTICS; TRANSPORT MECHANISM; TWO-TERMINAL DEVICES; ULTRA-THIN; VANADIUM DIOXIDE; VANADIUM DIOXIDE THIN FILMS;

ELECTRIC SWITCHES; EPITAXIAL FILMS; EPITAXIAL GROWTH; OXIDE MINERALS; TITANIUM DIOXIDE; VANADIUM;

SWITCHING;

EID: 84874520713 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4793537 Document Type: Article

Times cited : (40)

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