Fast switching protocol for ferroelectric random access memory based on poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films

Applied Physics Letters

Volumn 102, Issue 6, 2013, Pages

  Hou, Ying ^a   Lü, Zhaoyue ^a   Pu, Tiansong ^a   Zhang, Yuan ^a   Xu, Guoqiang ^b   Xu, Haisheng ^a  

^a EAST CHINA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b Kunshan Hisense Electronics Co Ltd   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAP STATE; EFFECTIVE FIELD; FAST SWITCHING; FERROELECTRIC LAYERS; FERROELECTRIC RANDOM ACCESS MEMORIES; IMPRINT TIME; INTERNAL ELECTRIC FIELDS; P COPOLYMERS; POLARIZATION SWITCHING; POLY(VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE); PVDF-TRFE; SWITCHING BEHAVIORS; SWITCHING SPEED;

COPOLYMERS; ELECTRIC FIELDS; FERROELECTRIC DEVICES; FERROELECTRICITY; SWITCHING;

ULTRATHIN FILMS;

EID: 84874235794     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4792689     Document Type: Article

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