The renaissance of the BJT as a highly efficient power device based on SiC material

PCIM Europe Conference Proceedings

Volumn , Issue , 2012, Pages 70-75

  Araujo, Samuel ^a   Menezes, Lucas ^a   Hjort, Tomas ^b   Zacharias, Peter ^a  

^a UNIVERSITY OF KASSEL   (Germany)

^b QSI (Quantum Semiconductor International) Co   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIONAL EXPERIMENTS; CORE MATERIAL; DEVICE PROPERTIES; DIRECT LINKS; EFFICIENT POWER; FAST SWITCHING; LOW-TEMPERATURE DEPENDENCE; PHOTOVOLTAIC SYSTEMS; RELIABLE OPERATION; SHORT CIRCUIT CAPABILITY; SIC MATERIALS; SPECIFIC RESISTANCES; STEP-UP CONVERTER; SWITCH STRUCTURE;

COREMAKING; ENERGY MANAGEMENT; EXHIBITIONS; INTELLIGENT ROBOTS; SILICON CARBIDE;

POWER ELECTRONICS;

EID: 84874130974     PISSN: None     EISSN: 21913358     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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2. B. J. Baliga, "Fundamentals of Power Semiconductor Devices", Springer, 2008.
3. Ahmed, M.M.R.; Parker-Allotey, N.-A.; Mawby, P.A.; Nawaz, M.; Zaring, C.;, "Characterization of the static and dynamic behavior of a SiC BJT, " Power Electronics and Motion Control Conference, 2008. EPE-PEMC 2008. 13th, vol., no., pp.2472-2477, 1-3 Sept. 2008.
4. J. Everts et al, "A Hard Switching VIENNA Boost Converter for Characterization of AIGaN/GaN/AIGaN Power DHFETs", Proceedings of the PCIM 2010 Europe, May 2010.
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6. Yan Gao; et.al, "Integration of 1200V SiC BJT With SiC Diode, " Power Semiconductor Devices and IC's, 2008. ISPSD '08. 20th International Symposium on, vol., no., pp.233-236, 18-22 May 2008.
7. S.Araujo, P. Zacharias, "Reducing the expenditure with cooling in renewable power conversion systems with innovative SiC switches", Proceedings of the 7th International Conference on Integrated Power Electronics Systmes, CIPS 2012, March 2012.
8. Datasheet Semisouth SGDR600P1 Demo-board, September 2011.