Enhancement of the hole-induced d0-ferromagnetism in ZnO through compensated donor-acceptor complexes: A first-principles study

Semiconductor Science and Technology

Volumn 28, Issue 3, 2013, Pages

  Wang, Hai Bin ^a   Tang, Li Ming ^a   Peng, P ^a   Tang, Yuan Hong ^a   Chen, Ke Qiu ^a  

^a HUNAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR DOPING; CATION VACANCIES; CO-DOPING; DONOR-ACCEPTOR COMPLEX; FIRST PRINCIPLES METHOD; FIRST-PRINCIPLES STUDY; FORMATION ENERGIES; INTRINSIC PROPERTY; POLARIZATION ENERGY; SPONTANEOUS FORMATION; SPONTANEOUS MAGNETIZATION; SUPER CELL; TRANSPARENT CONDUCTING OXIDE; WIDE-BAND-GAP SEMICONDUCTOR; ZNO;

CALCULATIONS; MAGNETIC MOMENTS; SEMICONDUCTOR DOPING; ZINC; ZINC OXIDE;

FERROMAGNETISM;

EID: 84874032111     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/28/3/035017     Document Type: Article

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