The role of inner and internal radiation on the melt growth of sapphire crystal

Crystal Research and Technology

Volumn 48, Issue 2, 2013, Pages 58-68

  Tavakoli, Mohammad Hossein ^a   Abasi, Talaye Arjmand ^a   Omid, Shirin ^a   Mohammadi Manesh, Ebrahim ^b  

^a BU ALI SINA UNIVERSITY   (Iran)

^b MALAYER UNIVERSITY   (Iran)

Author keywords

computer simulation; Czochralski method; fluid flow; heat transfer; oxides

Indexed keywords

CRYSTAL-MELT INTERFACE; CZOCHRALSKI FURNACES; GLOBAL ANALYSIS; GROWTH PROCESS; HEAT TRANSPORT; INTERNAL RADIATION; MELT GROWTH; QUASI-STEADY STATE; RADIATIVE HEAT TRANSFER; SAPPHIRE CRYSTAL; SAPPHIRE SINGLE CRYSTAL; STRONG DEPENDENCES; THERMAL FIELD;

COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; CRYSTAL STRUCTURE; FINITE ELEMENT METHOD; FLOW FIELDS; FLOW OF FLUIDS; OXIDES; RADIATIVE TRANSFER; SAPPHIRE;

HEAT TRANSFER;

EID: 84873896065     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.201200432     Document Type: Article

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