Use of numerical simulation for growing high-quality sapphire crystals by the Kyropoulos method

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 1443-1447

  Demina, S E ^a   Bystrova, E N ^a   Postolov, V S ^b   Eskov, E V ^b   Nikolenko, M V ^b   Marshanin, D A ^b   Yuferev, V S ^c   Kalaev, V V ^d  

^a SOFT IMPACT LTD   (Russian Federation)

^b Monocrystal Inc   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

^d Semiconductor Technology Research   (Germany)

Author keywords

A1. Computer simulation; A1. Mass transfer; A2. Kyropoulos method; B1. Sapphire

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; CRYSTAL STRUCTURE; FLOW PATTERNS; HEAT TRANSFER;

KYROPOULOS METHOD; SAPPHIRE CRYSTALS;

SAPPHIRE;

EID: 41549125074     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.083     Document Type: Article

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