Pulsed laser deposition and characterization of epitaxial CuInS2 thin films on c-plane sapphire substrates

Journal of Alloys and Compounds

Volumn 553, Issue , 2013, Pages 282-285

  Shang, Xunzhong ^a   Fang, Jingang ^a   Zhang, Lei ^a   Li, Mingkai ^a   Chang, Gang ^a   Li, Pai ^a   He, Yunbin ^a  

^a HUBEI UNIVERSITY   (China)

Author keywords

CuInS2; Epitaxial growth; Pulsed laser deposition; Thin film

Indexed keywords

ABSORBER LAYERS; C-PLANE SAPPHIRE; C-PLANE SAPPHIRE SUBSTRATES; CERAMIC TARGET; CHALCOPYRITE STRUCTURES; CUINS2; DEGREE OF CRYSTALLINITY; EPITAXIAL THIN FILMS; FUNDAMENTAL PROPERTIES; GROWTH MECHANISMS; HALF-WIDTH; HIGH QUALITY; HIGH-PURITY; HIGHLY DENSE; IN-PLANE ORIENTATION; IN-VACUUM; OUT-OF-PLANE ORIENTATION; PREFERRED ORIENTATIONS; ROCKING CURVES; TWO DOMAINS;

CONVERSION EFFICIENCY; COPPER COMPOUNDS; DEPOSITS; EPITAXIAL GROWTH; LASERS; PULSED LASER DEPOSITION; SAPPHIRE; SINTERING;

THIN FILMS;

EID: 84873819914     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2012.11.060     Document Type: Article

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