Quasi-epitaxial growth of thick CuInS2 films by RF reactive sputtering with a thin epilayer buffer

Thin Solid Films

Volumn 451-452, Issue , 2004, Pages 229-232

  He, Y B ^a   Krost, A ^b   Blasing J ^b   Kriegseis, W ^a   Polity, A ^a   Meyer, B K ^a   Kisielowski, C ^c  

^a JUSTUS LIEBIG UNIVERSITY   (Germany)

^b OTTO VON GUERICKE UNIVERSITY   (Germany)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

CuInS2 films; Quasi epitaxial growth; RF reactive sputtering; Sapphire

Indexed keywords

COPPER COMPOUNDS; CRYSTAL ORIENTATION; ENERGY GAP; EPITAXIAL GROWTH; FILM GROWTH; ORGANIC SOLVENTS; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; SPUTTERING; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

QUASI-EPITAXIAL GROWTH; RADIO FREQUENCY REACTIVE SPUTTERING;

THIN FILMS;

EID: 17644432160     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.10.100     Document Type: Conference Paper

References (11)

1. Tell B., Shay J.L., Kasper H.M. Phys. Rev. B. 4:1971;2463.
2. Henry C.H. J. Appl. Phys. 51:1980;4494.
3. Siebentritt S. Thin Solid Films. 403-404:2002;1.
4. Siemer K., Klaer J., Luck I., Bruns J., Klenk R., Bräunig D. Solar Energy Mater. Solar Cells. 67:2001;159.
5. Stolt L., Hedström J., Kessler J., Ruckh M., Velthaus K.O., Schock H.W. Appl. Phys. Lett. 62:1993;597.
6. Ramanathan K., Contreras M.A., Perkins C.L., Asher S., Hasoon F.S., Keane J., Young D., Romero M., Metzger W., Noufi R., Ward J., Duda A. Prog. Photovolt. Res. Appl. 11:2003;225.
7. Metzner H., Hahn T., Bremer J.H., Conrad J. Appl. Phys. Lett. 69:1996;1900.
8. He Y.B., Kriegseis W., Meyer B.K., Polity A., Serafin M. Appl. Phys. Lett. 83:2003;1743.
9. Y.B. He, Dissertation, Justus-Liebig-Universität Giessen, Germany, 2003.
10. Hunger R., Scheer R., Diesner K., Su D., Lewerenz H.J. Appl. Phys. Lett. 69:1996;3010.
11. Hunger R., Su D., Krost A., Ellmer D., Lewerenz H.J., Scheer R. Thin Solid Films. 361-362:2000;437.