Control of microstructure and magnetic properties of fept films with TiN intermediate layer

IEEE Transactions on Magnetics

Volumn 49, Issue 2, 2013, Pages 668-674

  Dong, K F ^a   Li, H H ^a   Hu, J F ^b   Peng, Y G ^c   Ju, G ^c   Chow, G M ^a   Chen, J S ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b DATA STORAGE INSTITUTE   (Singapore)

^c SEAGATE TECHNOLOGY   (United States)

Author keywords

FePt films; microstructure; perpendicular media; TiN intermediate layer

Indexed keywords

AVERAGE DIAMETER; CHEMICAL ORDERING; EPITAXIAL RELATIONSHIPS; FEPT FILMS; FEPT GRAINS; GRAIN SIZE; IN-PLANE COERCIVITY; INTERMEDIATE LAYERS; OUT-OF-PLANE COERCIVITY; PERPENDICULAR COERCIVITY; PERPENDICULAR MEDIA; PERPENDICULAR RECORDING; SINGLE-LAYER STRUCTURE; SPUTTERING PROCESS; TIN LAYERS; TRANSMISSION ELECTRON MICROSCOPY TEM; ULTRAHIGH DENSITY; UNIFORM SIZE;

CHROMIUM; COERCIVE FORCE; GRAIN SIZE AND SHAPE; MICROSTRUCTURE; SILICON NITRIDE; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR DOPING;

EID: 84873803265     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2012.2223204     Document Type: Article

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