Efficiency enhanced emitter wrap-through (EWT) screen-printed solar cells with non-uniform thickness of silicon nitride passivation layer in via-holes

Solar Energy

Volumn 90, Issue , 2013, Pages 188-194

  Cho, Jaeeock ^a   Lee, Honggu ^a   Hyun, Deochwan ^a   Lee, Yonghwa ^a   Jung, Woowon ^a   Hong, Jeongeui ^a  

^a Hanwha Corporation   (South Korea)

Author keywords

Emitter wrap through (EWT); Etch back; Reactive ion etching (RIE); Screen printing; Selective emitter (SE)

Indexed keywords

AG PASTES; CELL EFFICIENCY; DOPING PROFILES; EMITTER WRAP-THROUGH (EWT); ETCH RESISTS; ETCH-BACK; FILL FACTOR; FIRING CONDITIONS; FIRING PROCESS; NON-UNIFORM THICKNESS; PASSIVATION LAYER; SCREEN PRINTING TECHNOLOGY; SCREEN-PRINTED SOLAR CELLS; SELECTIVE EMITTERS; SHALLOW EMITTERS; SILICON NITRIDE PASSIVATION; VIA HOLE; WAFER SURFACE;

ELECTROLUMINESCENCE; OPTIMIZATION; PASSIVATION; REACTIVE ION ETCHING; SCREEN PRINTING; SILICON NITRIDE; SOLAR CELLS;

EFFICIENCY;

EFFICIENCY MEASUREMENT; ELECTRONIC EQUIPMENT; FILM; LUMINESCENCE; NITROGEN COMPOUND; OPTIMIZATION; PHOTOVOLTAIC SYSTEM; SILICON; SILVER; SOLAR POWER; TECHNOLOGICAL DEVELOPMENT;

EID: 84873711462     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2013.01.008     Document Type: Article

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