Physical properties of Al doped Ba hexagonal ferrite thin films

Journal of Applied Physics

Volumn 113, Issue 4, 2013, Pages

  Harward, Ian ^a   Nie, Yan ^a,b   Chen, Daming ^a,c   Baptist, Josh ^a   Shaw, Justin M ^d   Jakubisová Lišková, Eva ^e   Višňovský, Štefan ^e   Široký, Petr ^f   Lesňák, Michal ^f   Pištora, Jaromir ^f   Celinski, Zbigniew ^a  

^a UNIVERSITY OF COLORADO   (United States)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^d NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^e CHARLES UNIVERSITY   (Czech Republic)

^f VSB TECHNICAL UNIVERSITY OF OSTRAVA   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY FIELD; APPLIED MAGNETIC FIELDS; CURIE POINTS; DEVICE-QUALITY; DOPANT MATERIALS; EASY AXIS; FERROMAGNETIC RESONANCE LINEWIDTH; GROWTH TECHNIQUES; HEXAGONAL FERRITE; INDEX OF REFRACTION; MAGNETO-OPTICAL MEASUREMENTS; METAL ORGANIC DECOMPOSITION; OUT-OF PLANE; POLYCRYSTALLINE; PROPERTIES OF AL; ROOM TEMPERATURE; SELF BIASING; SIGNAL PROCESSING DEVICES; SPECTRAL ELLIPSOMETRY; SQUARENESS RATIO; STRONG ANISOTROPY; TEMPERATURE DEPENDENCE;

ANISOTROPY; ATOMIC FORCE MICROSCOPY; DOPING (ADDITIVES); LINEWIDTH; MAGNETIC FORCE MICROSCOPY; MAGNETIC MATERIALS; OPTICAL DATA PROCESSING; REFRACTIVE INDEX; SATURATION MAGNETIZATION; SIGNAL PROCESSING; THIN FILMS; X RAY DIFFRACTION;

ALUMINUM;

EID: 84873645761     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4788699     Document Type: Article

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