Observing electronic structures on ex-situ grown topological insulator thin films

Physica Status Solidi - Rapid Research Letters

Volumn 7, Issue 1-2, 2013, Pages 130-132

  Yao, S H ^a   Zhou, B ^b,c,d   Lu, M H ^a   Liu, Z K ^b   Chen, Y B ^a   Analytis, J G ^b   Brune C ^e   Dang, W H ^f   Mo, S K ^d   Shen, Z X ^b   Fisher, I R ^b   Molenkamp, L W ^e   Peng, H L ^f   Hussain, Z ^d   Chen, Y L ^c  

^a NANJING UNIVERSITY   (China)

^b STANFORD UNIVERSITY   (United States)

^c UNIVERSITY OF OXFORD   (United Kingdom)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^e UNIVERSITY OF WÜRZBURG   (Germany)

^f PEKING UNIVERSITY   (China)

Author keywords

ARPES; Dirac fermions; Surface states; Topological insulators

Indexed keywords

BISMUTH COMPOUNDS; ELECTRIC INSULATORS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; MERCURY COMPOUNDS; MOLECULAR BEAMS; PHOTOELECTRON SPECTROSCOPY; QUANTUM THEORY; SURFACE CLEANING; SURFACE STATES; TELLURIUM COMPOUNDS;

ANGLE RESOLVED PHOTOEMISSION SPECTROSCOPY; ARPES; CONDUCTING SURFACES; DIRAC FERMIONS; FUNCTIONAL DEVICES; MOLECULAR BEAM EPITAXIAL; SURFACE CLEANING PROCEDURE; TOPOLOGICAL INSULATORS;

THIN FILMS;

EID: 84873630785     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201206400     Document Type: Article

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