Effects of geometry parameters of NTFET devices on the I-V measurements

Solid-State Electronics

Volumn 81, Issue , 2013, Pages 32-34

  Justino, Celine I L ^a   Rocha Santos, Teresa A P ^a,b   Amaral, José P ^c   Cardoso, Susana ^c   Duarte, Armando C ^a  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b INSTITUTO PIAGET   (Portugal)

^c INESC   (Portugal)

Author keywords

Field effect transistors; Microfabrication process; Single walled carbon nanotubes

Indexed keywords

ELECTRODES; FIELD EFFECT TRANSISTORS; GEOMETRY; PARAMETER ESTIMATION; SINGLE-WALLED CARBON NANOTUBES (SWCN); YARN;

DEVICE PERFORMANCE; DIFFERENT GEOMETRY; GEOMETRY PARAMETER; GOLD LAYER; I-V MEASUREMENTS; MICROFABRICATION PROCESS; OUTPUT CHARACTERISTICS;

CARBON NANOTUBE FIELD EFFECT TRANSISTORS;

EID: 84873355214     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2012.12.013     Document Type: Letter

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