On the bandgap of hydrogenated nanocrystalline silicon intrinsic materials used in thin film silicon solar cells

Solar Energy Materials and Solar Cells

Volumn 111, Issue , 2013, Pages 90-96

  Yan, Baojie ^a   Yue, Guozhen ^a   Yang, Jeffrey ^a   Guha, Subhendu ^a  

^a UNITED SOLAR OVONIC LLC   (United States)

Author keywords

Diode characteristic; Mobility bandgap; Nanocrystalline silicon; Optical bandgap; Solar cell; Thin film silicon

Indexed keywords

ABSORPTION COEFFICIENTS; AMORPHOUS PHASE; CRYSTALLINE PHASE; CRYSTALLINITIES; ELECTRICAL MEASUREMENT; EXPERIMENTAL ERRORS; HYDROGENATED NANOCRYSTALLINE SILICON; HYDROGENATED NANOCRYSTALLINE SILICON (NC-SI:H); IDEALITY FACTORS; LINEAR RELATION; NC-SI:H; TEMPERATURE DEPENDENCE; THIN FILM SILICON; THIN-FILM SILICON SOLAR CELLS;

ACTIVATION ENERGY; HYDROGENATION; NANOCRYSTALLINE SILICON; NANOSTRUCTURED MATERIALS; OPEN CIRCUIT VOLTAGE; OPTICAL BAND GAPS; SILICON SOLAR CELLS; SOLAR CELLS; THIN FILMS;

ENERGY GAP;

EID: 84872926335     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2012.12.038     Document Type: Article

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