Degradation of deep ultraviolet photoresist by As-implantation studied by Ar-cluster beam profiling

Surface and Interface Analysis

Volumn 45, Issue 1, 2013, Pages 406-408

  Conard, T ^a   Franquet, A ^a   Tsvetanova, D ^a,c   Mouhib, T ^b   Vandervorst, W ^a  

^a IMEC   (Belgium)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^c KU LEUVEN   (Belgium)

Author keywords

Ar clusters; photoresist; TOF SIMS

Indexed keywords

AR-CLUSTERS; ARSENIC IMPLANTATION; AS-IMPLANTATION; BEAM PROFILING; CHEMICAL CHANGE; CRUST LAYER; DEEP ULTRAVIOLET; DEEP UV; FRONT END OF LINES; GATE MATERIALS; HIGH DOSE; IMPLANTED REGION; IMPLANTED SAMPLES; MACRORADICALS; MATRIX EFFECTS; MOLECULAR INFORMATION; MOLECULAR IONS; SEMICONDUCTOR MANUFACTURING; SPUTTER IONS; SPUTTER RATE; TOF SIMS; WAFER SUBSTRATES; WET CHEMISTRY; WET PROCESS;

ARSENIC; CESIUM; CHEMICAL ANALYSIS; CHEMICAL MODIFICATION; CROSSLINKING; DEGRADATION; HYDROGEN; ION IMPLANTATION; PHOTORESISTS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE MANUFACTURE;

ARGON;

EID: 84872874326     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.5126     Document Type: Conference Paper

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