Effect of static carrier screening on the energy relaxation of electrons in polar-semiconductor multiple-quantum-well superlattices

Journal of Applied Physics

Volumn 113, Issue 2, 2013, Pages

  Feng, Y ^a   Lin, S ^a   Green, M ^a   Conibeer, G ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; CARRIER COOLING; COUPLING STRENGTHS; DEBYE SCREENING LENGTH; ELECTRON ENERGIES; ENERGY RELAXATION; FOURIER COMPONENTS; GAAS; STRUCTURE CONFIGURATION;

SEMICONDUCTING INDIUM COMPOUNDS;

SEMICONDUCTOR SUPERLATTICES;

EID: 84872703897     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4774327     Document Type: Article

References (31)

1. R. Ross and A. Nozik, J. Appl. Phys. 53, 3813 (1982). 10.1063/1.331124
2. P. Würfel, Sol. Energy Mater. Sol. Cells 46, 43 (1997). 10.1016/S0927-0248(96)00092-X
3. G. Conibeer, C. Jiang, D. König, S. Shrestha, T. Walsh, and M. Green, Thin Solid Films 516, 6968 (2008). 10.1016/j.tsf.2007.12.031
4. Y. Feng, P. Aliberti, B. Veettil, R. Patterson, S. Shrestha, M. Green, and G. Conibeer, Appl. Phys. Lett. 100, 053502 (2012). 10.1063/1.3680594
5. P. Aliberti, Y. Feng, Y. Takeda, S. Shrestha, M. Green, and G. Conibeer, J. Appl. Phys. 108, 094507 (2010). 10.1063/1.3494047
6. W. Shockley and H. Queisser, J. Appl. Phys. 32, 510 (1961). 10.1063/1.1736034
7. A. Luque and A. Martí, Sol. Energy Mater. Sol. Cells 94, 287 (2010). 10.1016/j.solmat.2009.10.001
8. G. Conibeer, D. Konig, M. Green, and J. Guillemoles, Thin Solid Films 516, 6948 (2008). 10.1016/j.tsf.2007.12.102
9. G. Conibeer, N. Ekins-Daukes, J.-F. Guillemoles, D. König, E.-C. Cho, C.-W. Jiang, S. Shrestha, and M. Green, Sol. Energy Mater. Sol. Cells 93, 713 (2009). 10.1016/j.solmat.2008.09.034
10. Y. Rosenwaks, M. Hanna, D. Levi, D. Szmyd, R. Ahrenkiel, and A. Nozik, Phys. Rev. B 48, 14675 (1993). 10.1103/PhysRevB.48.14675
11. N. Sawaki, Surf. Sci. 170, 537 (1986). 10.1016/0039-6028(86)91017-4
12. N. Sawaki, J. Phys. C 19, 4965 (1986). 10.1088/0022-3719/19/25/013
13. M. A. Osman and D. K. Ferry, Phys. Rev. B 36, 6018 (1987). 10.1103/PhysRevB.36.6018
14. P. Price, J. Vac. Sci. Technol. 19, 599 (1981). 10.1116/1.571137
15. B. Ridley, J. Phys. C 15, 5899 (1982). 10.1088/0022-3719/15/28/021
16. S. Das Sarma, J. K. Jain, and R. Jalabert, Phys. Rev. B 37, 1228 (1988). 10.1103/PhysRevB.37.1228
17. C. Olson and D. Lynch, Phys. Rev. 177, 1231 (1969). 10.1103/PhysRev.177. 1231
18. S. Das Sarma, J. K. Jain, and R. Jalabert, Phys. Rev. B 37, 6290 (1988). 10.1103/PhysRevB.37.6290
19. L. C. Hirst, M. Fürher, D. J. Farrell, A. Le Bris, J.-F. Guillemoles, M. J. Y. Tayebjee, R. Clady, T. W. Schmidt, M. Sugiyama, Y. Wang, H. Fujii, and N. J. Ekins-Daukes, Proc. SPIE 8256, 82560X (2012). 10.1117/12.910581
20. P. Klemens, Phys. Rev. 148, 845 (1966). 10.1103/PhysRev.148.845
21. A. S. Barker, J. L. Merz, and A. C. Gossard, Phys. Rev. B 17, 3181 (1978). 10.1103/PhysRevB.17.3181
22. N. Sawaki and I. Akasaki, Physica B C 134, 494 (1985). 10.1016/0378-4363(85)90393-6
23. B. C. Lee, K. W. Kim, M. Dutta, and M. A. Stroscio, Phys. Rev. B 56, 997 (1997). 10.1103/PhysRevB.56.997
24. B. Van Zeghbroeck, Principles of Semiconductor Devices and Heterojunctions (Prentice Hall, Upper Saddle River, NJ, 2009).
25. C. Hamaguchi, Basic Semiconductor Physics (Springer Verlag, 2010).
26. J. Schulman and Y.-C. Chang, Phys. Rev. B 24, 4445 (1981). 10.1103/PhysRevB.24.4445
27. S. H. Pan and S. M. Feng, Phys. Rev. B 44, 5668 (1991). 10.1103/PhysRevB.44.5668
28. A. Katz, Indium Phosphide and Related Materials: Processing, Technology, and Devices (Artech House on Demand, 1992).
29. S. Adachi, Physical Properties of III-V Semiconductor Compounds (Wiley Online Library, 1992).
30. C. Colvard, T. Gant, M. Klein, R. Merlin, R. Fischer, H. Morkoc, and A. Gossard, Phys. Rev. B 31, 2080 (1985). 10.1103/PhysRevB.31.2080
31. S. Yip and Y. Chang, Phys. Rev. B 30, 7037 (1984). 10.1103/PhysRevB.30. 7037