InGaAs/GaAsP quantum wells for hot carrier solar cells

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8256, Issue , 2012, Pages

  Hirst, Louise C ^a   Führer, Markus ^a   Farrell, Daniel J ^a   Le Bris, Arthur ^b   Guillemoles, Jean François ^b   Tayebjee, Murad J Y ^c   Clady, Raphael ^c   Schmidt, Timothy W ^c   Sugiyama, Masakazu ^d   Wang, Yunpeng ^d   Fujii, Hiromasa ^d   Ekins Daukes, Nicholas J ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b 6 quai Watier   (France)

^c UNIVERSITY OF SYDNEY   (Australia)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

High efficiency; Hot carrier; Quantum well; Solar cell

Indexed keywords

ABSORBER MATERIAL; CARRIER COOLING; CARRIER DEVICES; CARRIER DISTRIBUTIONS; CARRIER POPULATION; CONTINUOUS WAVES; DEEP WELLS; GAAS; GAAS SURFACES; HOT CARRIER EFFECT; PHOTON ABSORPTIONS; PHOTON FLUX DENSITIES; SINGLE JUNCTION DEVICES; SOLAR CONCENTRATION; STRAIN-BALANCED; WELL REGION; WELL THICKNESS;

ABSORPTION COOLING; CARRIER CONCENTRATION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE SPECTROSCOPY; PHOTONIC DEVICES; PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR QUANTUM WELLS; SOLAR CELLS;

HOT CARRIERS;

EID: 84859991528     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.910581     Document Type: Conference Paper

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