Influence of the substrate thermal expansion coefficient on the morphology and elastic stress of CoSb3 thin films

Physica Status Solidi (A) Applications and Materials Science

Volumn 210, Issue 1, 2013, Pages 140-146

  Daniel, M ^a   Friedemann, M ^a   Johrmann N ^a   Liebig, A ^a   Donges, J ^b   Hietschold, M ^a   Beddies, G ^a   Albrecht, M ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b DESY   (Germany)

Author keywords

CoSb3; crack formation; skutterudites; thermal expansion coefficients; thermal stability; thermoelectricity

Indexed keywords

COOLING PROCESS; COSB3; ELASTIC STRESS; ELECTRICAL RESISTIVITY; ELECTRON BACK SCATTER DIFFRACTION; MINIMAL VALUE; PHASE FORMATIONS; POST ANNEALING; ROOM TEMPERATURE; RUTHERFORD BACK-SCATTERING SPECTROMETRY; SI (100) SUBSTRATE; THERMAL EXPANSION COEFFICIENTS; THERMALLY OXIDIZED; VARIOUS SUBSTRATES;

ANNEALING; ATOMIC FORCE MICROSCOPY; CRACK INITIATION; DEPOSITS; ELECTRIC CONDUCTIVITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SKUTTERUDITES; THERMAL EXPANSION; THERMODYNAMIC STABILITY; THERMOELECTRICITY; THIN FILMS; X RAY DIFFRACTION;

SUBSTRATES;

EID: 84872408901     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201228388     Document Type: Article

References (27)

1. M. S. Dresselhaus, G. Chen, M. Y. Tand, R. Yang, H. Lee, D. Whang, Z. Ren, J. Fleurial, and, P. Gogna, Adv. Mater. 19, 1043-1053 (2007).
2. G. S. Nolas, J. Sharp, and, H. J. Goldsmid, Thermoelectrics-Basic Principles and New Materials Developments (Springer, Berlin, Heidelberg, 2001).
3. M. Christensen, N. Lock, J. Overgaard, and, B. B. Iversen, J. Am. Chem. Soc. 128 (49), 15657-15665 (2006).
4. D. I. Bilc, S. D. Mahanti, and, M. G. Kanatzidis, Phys. Rev. B 74, 125202 (2006).
5. B. A. Cook, X. Wei, J. L. Harringa, and, M. J. Kramer, J. Mater. Sci. 42, 7643-7646 (2007).
6. G. A. Slack, in:, M. Rowe, (ed.), Thermoelectric Handbook, (CRC, Boca Raton, 1995), pp. 407-440.
7. M. Christensen, A. B. Abrahamsen, N. B. Christensen, F. Juranyi, N. H. Andersen, K. Lefmann, J. Andreasson, C. R. H. Bahl, and, B. B. Iversen, Nature Mater. 7, 811-815 (2008).
8. M. M. Koza, M. R. Johnson, R. Viennois, H. Mutka, Luc. Girard, and, D. Ravot, Nature Mater. 7, 805-810 (2008).
9. D. Colceaga, A. Dauscher, B. Lenoir, V. Da Ros, R. Birjega, A. Moldovan, and, M. Dinescu, Appl. Surf. Sci. 253, 8097-8101 (2007).
10. J. Y. Peng, P. N. Alboni, J. He, B. Zhang, Z. Su, T. Holgate, N. Gothard, and, T. M. Tritt, J. Appl. Phys. 104, 053710 (2008).
11. J. L. Mi, X. B. Zhao, T. J. Zhu, and, J. P. Tu, Appl. Phys. Lett. 91, 172116 (2007).
12. G. Rogl, A. Grytsiv, E. Bauer, P. Rogl, and, M. Zehetbauer, Intermetallics 18, 394-398 (2010).
13. S. R. Sarath Kumar, A. Alyamani, J. W. Graff, T. M. Tritt, and, H. N. Alshareef, J. Mater. Res. 26, 1836-1841 (2011).
14. E. D. Case, J. Electron. Mater. 41, 1811-1819 (2012).
15. J. A. Thornton, and, D. W. Hoffman, Thin Solid Films 171, 5-31 (1989).
16. J. Kawashima, Y. Yamada, and, I. Hirabayashi, Physica C 306, 114-118 (1998).
17. D. C. Yoo, J. Y. Lee, I. S. Kim, and, Y. T. Kim, J. Cryst. Growth 233, 243-247 (2001).
18. R. G. Elliman, T. D. M. Weijers-Dall, M. G. Spooner, T. Kim, and, A. R. Wilkinson, Nucl. Instrum. Methods Phys. Res. B 249, 310-313 (2006).
19. A. A. Volinsky, N. R. Moody, and, D. C. Meyer, 11th International Congress on Fracture Proceedings (Turin, Italy, 2005).
20. K. M. Crosby, and, R. M. Bradley, Philos. Mag. B 76, 91-105 (1997).
21. A. Möchel, I. Sergueev, N. Nguyen, Gary. J. Long, F. Grandjean, D. C. Johnson, and, R. P. Hermann, Phys. Rev. B 84, 064302 (2011).
22. G. Rogl, L. Zhang, P. Rogl, A. Grytsiv, M. Falmbigl, D. Rajs, M. Kriegisch, H. Müller, E. Bauer, J. Koppensteiner, W. Schranz, M. Zehetbauer, Z. Henkie, and, M. B. Maple, J. Appl. Phys. 107, 043507 (2010).
23. M. Daniel, C. Brombacher, G. Beddies, and, M. Albrecht, to be published.
24. http://www.ohara-gmbh.com/bn
25. W. A. Rachinger, J. Sci. Instrum. 25, 254-255 (1948).
26. V. Hauk, Structural and Residual Stress Analysis by Nondestructive Methods (Elsevier, Amsterdam, 1997).
27. X. Yang, P. Zhai, L. Liu, and, Q. Zhang, J. Appl. Phys. 109, 123517 (2011).