Atomic-scale mechanism of efficient hydrogen evolution at SiC nanocrystal electrodes

Journal of Physical Chemistry Letters

Volumn 4, Issue 1, 2013, Pages 100-104

  Shen, Xiao ^a   Pantelides, Sokrates T ^a,b,c  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACID SOLUTIONS; APPLIED VOLTAGES; ATOMIC-SCALE MECHANISMS; HIGH RATE; HYDROGEN EVOLUTION; HYDRONIUMS; METAL ELECTRODES; METAL SURFACES; ONE-STEP PROCESS; QUANTUM-MECHANICAL CALCULATION; SI DANGLING BONDS; SI-H BONDS; TWO-STEP PROCESS; ULTRA-SMALL; ULTRA-THIN;

HYDROGEN; NANOCRYSTALS; SILICON; SILICON CARBIDE;

ELECTROCHEMICAL ELECTRODES;

EID: 84872176020     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz301799w     Document Type: Article

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