Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111)

Nanotechnology

Volumn 24, Issue 4, 2013, Pages

  Cardin, V ^a   Dion Bertrand, L I ^a   Gregoire P ^a   Nguyen, H P T ^b   Sakowicz, M ^a   Mi, Z ^b   Silva, C ^a   Leonelli, R ^a  

^a UNIVERSITÉ DE MONTRÉAL   (Canada)

^b MCGILL UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE-SEPARATED STATE; DECAY CURVES; GAN NANOWIRES; INGAN/GAN; MODEL POINTS; NANOWIRE HETEROSTRUCTURES; PHOTON ENERGY; POWER LAW EXPONENT; RADIATIVE STATE; RECOMBINATION DYNAMICS; ROOM TEMPERATURE; SI (1 1 1); TIME-RESOLVED PHOTOLUMINESCENCE;

GALLIUM NITRIDE; NANOWIRES;

DYNAMICS;

GALLIUM; GALLIUM NITRIDE; INDIUM; INDIUM NITRIDE; NANOTUBE; SILICON;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; GALLIUM; INDIUM; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTUBES; PARTICLE SIZE; SILICON; SURFACE PROPERTIES;

MLCS; MLOWN;

EID: 84872149780     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/4/045702     Document Type: Article

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