Interplay of geometric and electronic structure in thin films of diindenoperylene on Ag(1 1 1)

Organic Electronics

Volumn 14, Issue 2, 2013, Pages 584-590

  Krause, S ^a,b   Scholl A ^b   Umbach, E ^c  

^a HAHN MEITNER INSTITUT   (Germany)

^b UNIVERSITY OF WÜRZBURG   (Germany)

^c KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

Author keywords

Diindenoperylene; IPES; LEED; Periflanthene; Transport gap; UPS

Indexed keywords

ELECTRON AFFINITY; ELECTRONIC STRUCTURE; ELECTRONS; ENVIRONMENTAL DESIGN; FILM GROWTH; IONIZATION POTENTIAL; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR ORIENTATION; PHOTOEMISSION; SILICA; SINGLE CRYSTALS; SUBSTRATES; TEMPERATURE;

DIINDENOPERYLENE; ELEVATED TEMPERATURE; INVERSE PHOTOEMISSION; IPES; PERIFLANTHENE; STRUCTURAL QUALITIES; SUBSTRATE TEMPERATURE; TRANSPORT GAP;

THIN FILMS;

EID: 84872106744     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2012.11.023     Document Type: Article

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