메뉴 건너뛰기




Volumn 66, Issue 8, 2002, Pages 1-4

Electrical spin injection from ferromagnetic MnAs metal layers into GaAs

Author keywords

[No Author keywords available]

Indexed keywords


EID: 84872060149     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.081304     Document Type: Article
Times cited : (2)

References (20)
  • 18
    • 0035537120 scopus 로고    scopus 로고
    • Electrons injected with the minority spin polarization contribute to the EL polarization component (formula presented) due to transitions from (formula presented) conduction band states to (formula presented) valence-band states. For calibration of the circular polarization handedness, Mn acceptor-related photoluminescence from a GaAs: Mn sample has been analyzed according to
    • Electrons injected with the minority spin polarization contribute to the EL polarization component (formula presented) due to transitions from (formula presented) conduction band states to (formula presented) valence-band states. For calibration of the circular polarization handedness, Mn acceptor-related photoluminescence from a GaAs: Mn sample has been analyzed according to: V.F. Sapega, T. Ruf, and M. Cardona, Phys. Status Solidi B 226, 339 (2001).
    • (2001) Phys. Status Solidi B , vol.226 , pp. 339
    • Sapega, V.F.1    Ruf, T.2    Cardona, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.